1 MRF21120R6 motorola rf device data the rf sub - micron mosfet line rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for fm, tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn - pcs/cellular radio and wll applications. ? w - cdma performance @ - 45 dbc, 5 mhz offset, 15 dtch, 1 perch output power ? 14 watts (avg.) power gain ? 11.5 db efficiency ? 16% ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 2170 mhz, 120 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 389 2.22 watts w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.45 c/w esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf21120/d motorola semiconductor technical data MRF21120R6 2170 mhz, 120 w, 28 v lateral n - channel rf power mosfet case 375d - 04, style 1 ni - 1230 ? motorola, inc. 2004 rev 9 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF21120R6 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain - source breakdown voltage (v gs = 0 vdc, i d = 20 adc) v (br)dss 65 ? ? vdc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc ) i gss ? ? 1 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc on characteristics (1) forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.8 ? s gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2.5 3 3.8 vdc gate quiescent voltage (v ds = 28 v, i d = 500 ma) v gs(q) 3 3.9 5 vdc drain - source on - voltage (v gs = 10 v, i d = 2 a) v ds(on) ? 0.38 0.5 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 2.8 ? pf functional tests (in motorola test fixture, 50 ohm system) (2) common - source amplifier power gain (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 10.5 11.4 ? db drain efficiency (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) 30 34.5 ? % intermodulation distortion (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) imd ? -31 -28 db input return loss (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2170.0 mhz, f2 = 2170.1 mhz) irl ? -12 -9 db common - source amplifier power gain (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) g ps ? 11.5 ? db common - source amplifier power gain (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) g ps ? 11.5 ? db drain efficiency (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) ? 34.5 ? % intermodulation distortion (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) imd ? -31 ? db input return loss (v dd = 28 vdc, p out = 120 w pep, i dq = 2 500 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz) irl ? -12 ? db power output, 1 db compression point (v dd = 28 vdc, cw, i dq = 2 500 ma, f1 = 2170.0 mhz) p1db ? 120 ? watts (1) each side of device measured separately. (2) device measured in push - pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF21120R6 motorola rf device data electrical characteristics ? continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (2) (continued) common - source amplifier power gain (v dd = 28 vdc, p out = 120 w cw, i dq = 2 500 ma, f1 = 2170.0 mhz) g ps ? 10.5 ? db drain efficiency (v dd = 28 vdc, p out = 120 w cw, i dq = 2 500 ma, f1 = 2170.0 mhz) ? 42 ? % output mismatch stress (v dd = 28 vdc, p out = 120 w cw, i dq = 2 500 ma, f = 2.17 ghz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test (2) device measured in push - pull configuration. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF21120R6 4 motorola rf device data figure 1. 2.1 - 2.2 ghz broadband test circuit schematic v gg c19 c17 b1 c16 c14 + v dd c33 + c32 r3 c34 c35 + z1 z10 z12 z14 z18 z20 dut c2 z22 rf input c3 coax1 rf output z26 c9 z28 z30 z34 c7 z36 z24 c8 coax2 v gg c25 c24 c23 c21 + coax3 c6 v dd c42 c41 c40 + c43 c44 + coax4 b1, b2 ferrite beads, fair rite c1, c2, c12 0.6 - 4.5 pf variable capacitors, johanson gigatrim c3, c4, c9, c10 10 pf chip capacitors, b case, atc c5 0.4 - 2.5 pf variable capacitor, johanson gigatrim c6, c7 2.0 pf chip capacitors, b case, atc c8 0.5 pf chip capacitor, b case, atc c11 0.2 pf chip capacitor, b case, atc c13, c20, c29, c37 5.1 pf chip capacitors, b case, atc c14, c21, c28, c38 91 pf chip capacitors, b case, atc c15, c22, c27, c34, c36, c42 22 f, 35 v tantalum surface mount chip capacitors, kemet c16, c23, c33, c43 0.039 f chip capacitors, b case, atc c17, c24, c32, c41 1000 pf chip capacitors, b case, atc c19, c25 0.022 f chip capacitors, b case, atc c30, c39 1.0 f, 35 v tantalum surface mount chip capacitors, kemet c31, c40 100 f, 50 v electrolytic capacitors, sprague c35, c44 470 f, 63 v electrolytic capacitors, sprague coax1, coax2 25 ? semi rigid coax, 70 mil od, 1.05 long coax3, coax4 50 ? semi rigid coax, 85 mil od, 1.05 long l1, l5 5.0 nh minispring inductors, coilcraft l2 8.0 nh minispring inductor, coilcraft l3, l4 7.15 nh microspring inductors, coilcraft r1, r2 1 k ? , 1/4 w fixed metal film resistors, dale r3, r4 270 ? , 1/8 w fixed film chip resistors, dale r5, r6 1.2 k ? , 1/8 w fixed film chip resistors, dale z1 0.150 x 0.080 microstrip z2 0.320 x 0.080 microstrip z4, z5 1.050 x 0.080 microstrip z6, z7 0.120 x 0.080 microstrip z8, z9 0.140 x 0.080 microstrip z10, z1 1 0.610 x 0.080 microstrip z12, z13 0.135 x 0.080 microstrip z14, z15 0.130 x 0.080 microstrip z16, z17 0.300 x 0.350 microstrip z18, z19 0.150 x 0.500 microstrip z20, z21 0.075 x 0.500 microstrip z22, z23 0.330 x 0.500 microstrip z24, z25 0.100 x 0.550 microstrip z26, z27 0.175 x 0.550 microstrip z28, z29 0.045 x 0.550 microstrip z30, z31 0.190 x 0.325 microstrip z32, z33 0.080 x 0.325 microstrip z34, z35 0.515 x 0.080 microstrip z36, z37 0.020 x 0.080 microstrip z38, z39 0.565 x 0.080 microstrip z40 0.100 x 0.080 microstrip z41 0.470 x 0.080 microstrip z42 0.100 x 0.080 microstrip board material 0.03 teflon ? , r = 2.55 copper clad, 2 oz. cu connectors n -type panel mount, stripline c13 c15 r5 l2 z8 c1 z6 z2 z4 z5 l1 z16 z11 z13 z15 z19 z21 z23 c4 z9 z7 z17 r6 c20 c22 b2 r4 c31 c27 c29 c28 c30 z32 c11 z38 z39 l4 z27 c10 z29 z31 z35 z37 z25 z33 c36 c37 c38 c39 z42 l5 z41 c12 z40 + + l3 r1 r2 c5 + + + + + + + + f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF21120R6 motorola rf device data figure 2. 2.1 - 2.2 ghz broadband test circuit component layout l1 r1 c19 b1 r3 r5 c1 c2 r2 l2 c3 c4 r6 r4 b2 c25 v gg c24 c23 c22 c21 c20 c17 c16 c15 c14 c13 c30 c29 c7 l3 l4 c8 c6 c37 c39 c38 c36 c40 c42 c44 v dd c41 c43 c9 c10 c11 c12 c5 l5 c27 c32 c33 v dd v gg c31 c34 c35 226 35k 649 226 35k 649 226 35k 649 226 35k 649 226 35k 649 640 50k 105 226 35k 649 c28 640 50k 105 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF21120R6 6 motorola rf device data typical characteristics figure 3. power gain versus output power p out , output power (watts) pep 9 10 figure 4. intermodulation distortion versus output power p out , output power (watts) pep 1.0 0.10 0.10 13 figure 5. class ab broadband circuit performance 13 f, frequency (mhz) 5 figure 6. 2.17 ghz w - cdma mask at 14 watts (avg.), 5 mhz offset, 15 dtch, 1 perch center 2.17 ghz figure 7. power gain, efficiency, acpr versus output power (w - cdma) p out , output power (watts) avg. 10 2100 12 14 14 7 11 2140 11 2200 1.0 8 10 2 100 12 imd, intermodulation distortion (dbc) ?60 ?20 ?50 ?30 ?40 ?32 40 ?26 ?30 50 45 35 12 9 2180 2120 2160 g ps ?100 ?60 ?30 ?80 ?40 ?20 ?10 10 figure 8. power gain, efficiency, imd versus output power p out , output power (watts) pep 10 12 13 7 100 1.0 9 11 5 , power gain (db) g ps 1800 ma 1500 ma 1300 ma 1100 ma 1000 ma 850 ma 600 ma v dd = 28 vdc f1 = 2170.0 mhz f2 = 2170.1 mhz 1.0 10 100 1800 ma 600 ma 850 ma 1100 ma 1000 ma 1300 ma 1500 ma v dd = 28 vdc f1 = 2170.0 mhz f2 = 2170.1 mhz ?28 ?24 imd, intermodulation distortion (dbc) , efficiency (%) 10 6 8 vswr imd v dd = 28 vdc, i dq = 2 x 500 ma two?tone, 100 khz tone spacing vswr 2.0 1.0 1.5 1.5 mhz span 15 mhz ?70 ?90 ?50 c11 c11 c0 c0 cu1 cu1 1rm ref lv1 ?5 dbm marker 1 [t1] ?22.77 dbm 2.17000000 ghz rbw vbw swt 30 khz 1 mhz 2 s rf att unit 10 db dbm 4 6 , efficiency (%) acpr (db) 20 ?40 60 40 0 ?60 ?20 g ps acpr up acpr down v dd = 28 vdc i dq = 2 x 750 ma f = 2170 mhz , efficiency (%) imd, intermodulation distortion (dbc) 6 8 10 20 ?60 80 40 0 ?80 ?40 ?20 60 g ps imd v dd = 28 vdc, i dq = 2 x 500 ma f = 2170.0 mhz, f2 = 2170.1 mhz 0.10 1 ch pwr acr up acr low 1 [t1] a ?22.77 dbm 2.17000000 ghz ?2.95 dbm ?45.14 db ?45.45 db , power gain (db) g ps , power gain (db) g ps , power gain (db) g ps f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF21120R6 motorola rf device data figure 9. series equivalent input and output impedance f mhz z source ? z load ? 2110 2140 2170 3.7 - j2.0 3.1 - j2.5 3.5 - j2.4 4.9 - j2.8 5.1 - j2.7 5.2 - j2.5 v dd = 28 v, i dq = 2 500 ma, p out = 120 w pep f = 2170 mhz z o = 10 ? z source z load f = 2170 mhz z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + f = 2110 mhz f = 2110 mhz f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF21120R6 8 motorola rf device data package dimensions case 375d - 04 issue c ni - 1230 notes: 1. interpret dimensions and tolerances per asme y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.079 0.089 2.01 2.26 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 12 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4 information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors mrf21120/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
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